中红外硅基光波导的发展现状

doi:10.16180/j.cnki.issn1007-7820.2024.02.006

Abstract

Abstract:

As the basic passive device in silicon photonic integrated chip, silicon-based optical waveguide is the channel for optical signal transmission. Because of its good performance and compatibility with CMOS(Complementary Metal Oxide Semiconductor) process, silicon-based optical waveguide has been widely used. Silicon photonic integrated circuits used in telecommunications and data centers have been gradually commercialized.The potential applications of mid-infrared band in free-space communication, sensing, environmental monitoring and other fields have attracted much attention from researchers in recent years.In this study, the research status of mid-infrared silicon-based optical waveguides in recent years is analyzed.The research results of waveguide material platform of SOI(Silicon on Insulator)、GOSI(Ge-on-SOI)、SOS(Si on Sapphire)、GOS(Ge-on-Si)、SGOS(SiGe-on-Si)、SON(Si-on Si₃N₄)、GON(Ge-on Si₃N₄) and manufacturing process platform of SOPS(Si on Porous Si), Pedestal, Freestanding, Suspended, LOCOS(Local Oxidation of Silicon), plasma structure are summarized. So far, the propagation loss of most monocrystalline silicon in MIR(Mid-Infrared) platform is about 0.7~3.0 dB·cm^-1. The application prospects of different types of waveguides are discussed and compared, which provides a reference for the research and development, application and commercialization of mid-infrared silicon-based optical waveguides.

Key words: mid-infrared, silicon photonics, passive device, silicon-based optical waveguide, silicon on insulator, germanium silicon, propagation loss, working wavelength

CLC Number:

TN214

FENG Lulu,FENG Song,HU Xiangjian,CHEN Menglin,LIU Yong,WANG Di. Research Status of Mid-Infrared Silicon-Based Optical Waveguides[J].Electronic Science and Technology, 2024, 37(2): 36-45.

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波导类型	材料平台	工作波长/μm	偏振模式	传输损耗/dB·cm^-1	文献出处
strip	SOI	3.800	TE	3.00	[9]
strip	SOI	3.800	TE/TM	3.40	[12]
slot	SOI	3.800	TE	1.40±0.20	[13]
FSSWG	SOI	2.200	TE	2.80	[14]
strip	GOSI	3.682	TE/TM	8.00	[15]
Rib	SOS	4.500	TE	4.30±0.60	[18]
strip	SOS	4.500	TE	0.74	[19]
strip	SOS	5.180	TE	1.92	[20]
Rib	SOS	5.500	TE	4.00±0.70	[21]
Rib	GOS	8.000~11.000	TE/TM	<5.50	[22]
Rib	GOS	4.700	TE/TM	1.00	[23]
strip	GOS	5.800	TE	2.50	[24]
Rib	GOS	3.800	TE	2.70	[25]
strip	SGOS	4.500	TE/TM	1.00	[27]
strip	SGOS	7.400	TE/TM	2.00	[27]
Rib	SGOS	5.500~8.500	TE/TM	2.00~3.00	[28]
Rib	SON	3.390	TE	5.20±0.60	[29]
Rib	SON	3.390	TM	5.16±0.60	[29]
Rib	GOSN	3.800	TE/TM	3.35	[35]

波导类型	材料平台	工作波长/μm	偏振模式	传输损耗/dB·cm^-1	文献出处
SOPS	SOI	3.39	TE	3.90	[37]
Undercut	SOI	10.60	TE	6.00	[38]
pedestal	SOI	3.70	TE	2.70	[39]
pedestal	SOI	7.10	TE₁₀	0.53	[40]
freestanding	SOI	5.50	TE	13.00~14.00	[41]
Suspended	SOI	7.67	TE	3.10±0.30	[42]
Suspended	SOI	3.80	TE	0.82	[43]
Suspended Ge	GOS	7.50	TE	2.50	[44]
Suspended Ge	GOS	7.70	TE	2.65	[44]
LOCOS	SOI	3.39	TE	1.40	[37]

Research Status of Mid-Infrared Silicon-Based Optical Waveguides

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