Electronic Science and Technology ›› 2024, Vol. 37 ›› Issue (2): 46-54.doi: 10.16180/j.cnki.issn1007-7820.2024.02.007

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Research Progress of SiGe Electro-Optical Modulator

WANG Di,FENG Song,CHEN Menglin,LIU Yong,HU Xiangjian,FENG Lulu   

  1. School of Science,Xi'an Polytechnic University,Xi'an 710048,China
  • Received:2022-08-27 Online:2024-02-15 Published:2024-01-18
  • Supported by:
    National Key R&D Program of China(2018YFB2200500);National Natural Science Foundation of China(61204080);National Key Laboratory Fund(SKL201804);Shaanxi Provincial Key Research and Development Plan(2022GY-012);Xi'an Science and Technology Plan(2020KJRC0026)


Photon modulator is the core device in the optical fiber communication system, which mainly modulates the optical signal to realize the conversion of the signal from the electrical domain to the optical domain. With the development of silicon based semiconductor technology, silicon based photonic modulator has gradually become a mainstream silicon photonic device. The realization of GHz bandwidth modulator based on silicon technology also lays a foundation for the development of silicon photonics. As a high performance optical modulator for short distance off optical interconnection, SiGe optical absorption modulator has gotten much attention. This study discusses the development status of high-performance SiGe electro-optic modulator, mainly analyzes the research progress of silicon based photonic modulator at home and abroad,and discusses the electrical modulation structures such as PIN, PN junction, which provides a way to continue to develop high-speed, low loss photonic modulator in the future.

Key words: silicon photonics, photonic device, modulator, SiGe, PIN, PN, quantum well, research progress

CLC Number: 

  • TN256