SiGe电光调制器研究进展

doi:10.16180/j.cnki.issn1007-7820.2024.02.007

Abstract

Abstract:

Photon modulator is the core device in the optical fiber communication system, which mainly modulates the optical signal to realize the conversion of the signal from the electrical domain to the optical domain. With the development of silicon based semiconductor technology, silicon based photonic modulator has gradually become a mainstream silicon photonic device. The realization of GHz bandwidth modulator based on silicon technology also lays a foundation for the development of silicon photonics. As a high performance optical modulator for short distance off optical interconnection, SiGe optical absorption modulator has gotten much attention. This study discusses the development status of high-performance SiGe electro-optic modulator, mainly analyzes the research progress of silicon based photonic modulator at home and abroad,and discusses the electrical modulation structures such as PIN, PN junction, which provides a way to continue to develop high-speed, low loss photonic modulator in the future.

Key words: silicon photonics, photonic device, modulator, SiGe, PIN, PN, quantum well, research progress

CLC Number:

TN256

WANG Di,FENG Song,CHEN Menglin,LIU Yong,HU Xiangjian,FENG Lulu. Research Progress of SiGe Electro-Optical Modulator[J].Electronic Science and Technology, 2024, 37(2): 46-54.

Figures/Tables 19

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References 50

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参考	类型	波长 /nm	偏置电压/V	电流 /nA	截止频率 /GHz	传输光功率/Gbit·s^-1
文献[19]	V-PIN	1 550	1.0	1.6	40	-
文献[20]	V-PIN	1 530	1.0	3.0	45	-
文献[21]	L-PIN	1 550	1.0	4.0	120	40@0 V
文献[22]	L-PIN	1 550	0.5	500.0	14~19	-
文献[23]	L-PIN	1 550	1.0	160.0	17@4 V	-
文献[24]	L-PIN	1 550	1.0	32.0	45~90	25/40
文献[25]	V-PIN	1 550	4.0	120.0	20	10
文献[26]	V-PIN	1 550	1.0	11.0	50	28

参考	类型	调制效率 /V·cm	调制波长 /nm	最大调制速率/Gbit·s^-1	3 dB带宽 /GHz	能耗 /fJ·bit^-1	尺寸 /μm²	消光比 /dB	插入损耗 /dB	能耗 /fJ·bit^-1
文献[38]	MZ	2.80	1 550	50	-	-	-	3.1	3.70	-
文献[39]	MZ	2.00	1 550	60	28	-	-	3.6	1.20	-
文献[40]	微环	-	1 550	41	21	1.03	10×10	6.4	1.20	1.03
文献[41]	MZ	2.43	1 310	50	30	450	3 000×5 000	3.4	3.34	450.00
文献[42]	微环	2.50	1 550	10	-	287	-	4.0	-	287.0
文献[43]	微环	-	1 566	56	40	45	5×5	4.5	2.40	45.00
文献[44]	MZ	-	2 000	40	-	-	-	10.4	12.50	-

参考	类型	能耗 /fJ·bit^-1	尺寸 /μm²	摆动电压 /V	3 dB带宽/GHz	消光比 /dB	插入损耗/dB
文献[48]	GeSi QCSE	-	π × 302	1.5	35	2.5	>4.5
文献[49]	GeSi QCSE	16	3.0× 90	1.0	23	9.0	15.0
文献[12]	GeSi QCSE	-	0.6 × 40	0.0~2.0	-	4.6	-
文献[8]	GeSi QCSE	-	1.0× 50	0.0~2.8	-	6.0	-
文献[50]	GeSi QCSE	-	1.4 × 70	0.0~4.0	-	3.7	5.0

Research Progress of SiGe Electro-Optical Modulator

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