4H-SiC材料干法刻蚀工艺的研究

doi:10.16180/j.cnki.issn1007-7820.2019.02.001

Abstract

Abstract:

Due to the stability of SiC material and the disadvantages of wet etching, dry etching is generally used to etch SiC material. However,the roughness of the etched sample surface caused by dry etching will have a certain impact on the performance of the device. In order to solve the problem, inductively coupled plasma-reactive ion etching (ICP-RIE) was applied to etch SiC material with the mixture of SF₆/O₂ and SF₆/CF₄/O₂. The effects of pressure, ICP power and gas mixture ratio on the surface roughness of the samples were investigated respectively. The experimental results showed that with use of the mixture of SF₆/O₂ , the surface roughness was improved. Under certain RIE power, when the ICP power was 700 W, the pressure was 20 mT and SF₆/O₂ was 50/40 sccm. Meanwhile, the roughness of the sample surface was the minimum.

Key words: silicon carbide, inductively coupled plasma-reactive ion etching, roughness, pressure, power, SF₆/O₂

CLC Number:

TN305

XU Longlai,ZHONG Zhiqin. Study of Dry Etching in 4H-SiC Material[J].Electronic Science and Technology, 2019, 32(2): 1-3.

Figures/Tables 5

References 16

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Study of Dry Etching in 4H-SiC Material

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