关键词: CCD, 表面暗电流, 界面态密度, 温度, 辐照

Abstract:

The temperature characteristic and γ radiation characteristic of surface dark current of CCD is investigated.The results indicate that surface dark current is primary resource of CCD dark current and primary influencing factor of CCD dark current nonuniformity.Interface state density located Si-SiO2 interface increased with γ radiation dose,considerably increased surface dark current.That is primary influencing factor of increase on the CCD dark current after γ radiation.

Key words: CCD;surface dark current;interface state density;temperature;radiation