SiGe电光调制器研究进展

doi:10.16180/j.cnki.issn1007-7820.2024.02.007

摘要/Abstract

摘要：

光子调制器是光纤通信系统中的核心器件,主要对光信号进行调制,实现信号从电域到光域的转换。随着硅基半导体工艺的发展,硅基光子调制器逐渐成为了主流硅光子器件,基于硅工艺技术的GHz带宽调制器的实现也为硅光子学的发展奠定了基础。作为一种用于短距离光互连的高性能光调制器,SiGe光吸收调制器受到了较多关注。文中讨论了高性能SiGe电光调制器的发展现状,对国内外硅基光子调制器的研究进展进行分析,讨论了PIN、PN结等电学调制结构,为研发高速率、低损耗的光子调制器提供了思路。

关键词: 硅光子学, 光子器件, 调制器, 锗硅, PIN, PN, 量子阱, 研究进展

Abstract:

Photon modulator is the core device in the optical fiber communication system, which mainly modulates the optical signal to realize the conversion of the signal from the electrical domain to the optical domain. With the development of silicon based semiconductor technology, silicon based photonic modulator has gradually become a mainstream silicon photonic device. The realization of GHz bandwidth modulator based on silicon technology also lays a foundation for the development of silicon photonics. As a high performance optical modulator for short distance off optical interconnection, SiGe optical absorption modulator has gotten much attention. This study discusses the development status of high-performance SiGe electro-optic modulator, mainly analyzes the research progress of silicon based photonic modulator at home and abroad,and discusses the electrical modulation structures such as PIN, PN junction, which provides a way to continue to develop high-speed, low loss photonic modulator in the future.

Key words: silicon photonics, photonic device, modulator, SiGe, PIN, PN, quantum well, research progress

中图分类号:

TN256

王迪,冯松,陈梦林,刘勇,胡祥建,冯露露. SiGe电光调制器研究进展[J]. 电子科技, 2024, 37(2): 46-54.

WANG Di,FENG Song,CHEN Menglin,LIU Yong,HU Xiangjian,FENG Lulu. Research Progress of SiGe Electro-Optical Modulator[J]. Electronic Science and Technology, 2024, 37(2): 46-54.

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参考	类型	波长 /nm	偏置电压/V	电流 /nA	截止频率 /GHz	传输光功率/Gbit·s^-1
文献[19]	V-PIN	1 550	1.0	1.6	40	-
文献[20]	V-PIN	1 530	1.0	3.0	45	-
文献[21]	L-PIN	1 550	1.0	4.0	120	40@0 V
文献[22]	L-PIN	1 550	0.5	500.0	14~19	-
文献[23]	L-PIN	1 550	1.0	160.0	17@4 V	-
文献[24]	L-PIN	1 550	1.0	32.0	45~90	25/40
文献[25]	V-PIN	1 550	4.0	120.0	20	10
文献[26]	V-PIN	1 550	1.0	11.0	50	28

参考	类型	调制效率 /V·cm	调制波长 /nm	最大调制速率/Gbit·s^-1	3 dB带宽 /GHz	能耗 /fJ·bit^-1	尺寸 /μm²	消光比 /dB	插入损耗 /dB	能耗 /fJ·bit^-1
文献[38]	MZ	2.80	1 550	50	-	-	-	3.1	3.70	-
文献[39]	MZ	2.00	1 550	60	28	-	-	3.6	1.20	-
文献[40]	微环	-	1 550	41	21	1.03	10×10	6.4	1.20	1.03
文献[41]	MZ	2.43	1 310	50	30	450	3 000×5 000	3.4	3.34	450.00
文献[42]	微环	2.50	1 550	10	-	287	-	4.0	-	287.0
文献[43]	微环	-	1 566	56	40	45	5×5	4.5	2.40	45.00
文献[44]	MZ	-	2 000	40	-	-	-	10.4	12.50	-

参考	类型	能耗 /fJ·bit^-1	尺寸 /μm²	摆动电压 /V	3 dB带宽/GHz	消光比 /dB	插入损耗/dB
文献[48]	GeSi QCSE	-	π × 302	1.5	35	2.5	>4.5
文献[49]	GeSi QCSE	16	3.0× 90	1.0	23	9.0	15.0
文献[12]	GeSi QCSE	-	0.6 × 40	0.0~2.0	-	4.6	-
文献[8]	GeSi QCSE	-	1.0× 50	0.0~2.8	-	6.0	-
文献[50]	GeSi QCSE	-	1.4 × 70	0.0~4.0	-	3.7	5.0