Electronic Science and Technology ›› 2020, Vol. 33 ›› Issue (1): 46-50.doi: 10.16180/j.cnki.issn1007-7820.2020.01.009

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Research on TSV Structure of 2.5D Silicon Interposer

LIU Jiansong,LIN Pengrong,HUANG Yingzhuo,LIAN Binhao   

  1. Beijing Microelectronics Technology Institute,Beijing 100076,China
  • Received:2018-12-24 Online:2020-01-15 Published:2020-03-12
  • Supported by:
    Beijing Natural Science Foundation(4172065)


Aiming at the problem that the influence of structural parameters on the reliability of TSV is not clear, the finite element analysis and model simplification method were used to analyze the stress-strain distribution of TSV structure under temperature cycling conditions. The effect of structural parameters including copper pillar diameter, SiO2 layer thickness and TSV pitch on the reliability of TSV structure were further studied. The results showed that the fitting degree of the results obtained by simplifying the model was above 0.95. When the temperature cyclic load was applied to the TSV structure, stress concentration would occur at the SiO2 interface, and strain increase would occur in the passivation layer. Changing the copper column diameter, insulation thickness and TSV pitch could significantly affect the reliability of the TSV structure. Reducing the diameter of the filled copper, increasing the thickness of the SiO2 layer, and increasing the TSV pitch all helped to reduce the maximum stress of the TSV structure.

Key words: TSV, finite element analysis, model simplification method, structural parameters, temperature cycling, stress concentration

CLC Number: 

  • TN305.94