2.5D硅转接板TSV结构研究

doi:10.16180/j.cnki.issn1007-7820.2020.01.009

Abstract

Abstract:

Aiming at the problem that the influence of structural parameters on the reliability of TSV is not clear, the finite element analysis and model simplification method were used to analyze the stress-strain distribution of TSV structure under temperature cycling conditions. The effect of structural parameters including copper pillar diameter, SiO₂ layer thickness and TSV pitch on the reliability of TSV structure were further studied. The results showed that the fitting degree of the results obtained by simplifying the model was above 0.95. When the temperature cyclic load was applied to the TSV structure, stress concentration would occur at the SiO₂ interface, and strain increase would occur in the passivation layer. Changing the copper column diameter, insulation thickness and TSV pitch could significantly affect the reliability of the TSV structure. Reducing the diameter of the filled copper, increasing the thickness of the SiO₂ layer, and increasing the TSV pitch all helped to reduce the maximum stress of the TSV structure.

Key words: TSV, finite element analysis, model simplification method, structural parameters, temperature cycling, stress concentration

CLC Number:

TN305.94

LIU Jiansong,LIN Pengrong,HUANG Yingzhuo,LIAN Binhao. Research on TSV Structure of 2.5D Silicon Interposer[J].Electronic Science and Technology, 2020, 33(1): 46-50.

Figures/Tables 12

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结构	尺寸
芯片	5.4×6.4×0.75
微凸点	0.07
C4凸点	0.13
转接板	24×20×0.11
基板尺寸	34×34×2.4

材料	热膨胀系数/×10^-6/K	杨氏模量/GPa	泊松比
Sn63Pb37	21.6	30.8	0.35
Pb90Sn109	28.2	19.03	0.282
Si	3	129	0.28
陶瓷基板	7	241	0.25
Cu	16.7	116	0.339
SiO₂	0.57	44	0.17
Polyimide	20	1.37	0.42

Research on TSV Structure of 2.5D Silicon Interposer

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