[1] |
王纪伟. 基于单片机控制的高速数据采集与处理系统研究[J]. 电子科技, 2019, 32(11):74-77.
|
|
Wang Jiwei. Research on high speed data acquisition and processing system based on SCM control[J]. Electronic Science and Technology, 2019, 32(11):74-77.
|
[2] |
金恒康, 张一闻. 基于Zynq的麦克风阵列同步高速采集系统设计[J]. 电子科技, 2019, 32(7):28-32.
|
|
Jin Hengkang, Zhang Yiwen. Research on design of synchronous high speed acquisition system of microphone array based on Zynq[J]. Electronic Science and Technology, 2019, 32(7):28-32.
|
[3] |
Sun Y N, Gu J W, He W F, et al. Energy-efficient nonvolatile SRAM design based on resistive switching multi-level cells[J]. IEEE Transactions on Circuits and Systems II-Express Briefs, 2019, 66(5):753-757.
doi: 10.1109/TCSII.2019.2908243
|
[4] |
Borghetti J, Snider G S, Kuekes P J, et al. Memristive switches enable ‘stateful’ logic operations via material implication[J]. Nature, 2010, 464(7290):873-876.
doi: 10.1038/nature08940
|
[5] |
Kvatinsky S, Satat G, Wald N, et al. Memristor-based material implication (IMPLY) logic: Design principles and methodologies[J]. IEEE Transactions on Very Large Scale Integration Systems, 2014, 22(10):2054-2066.
doi: 10.1109/TVLSI.2013.2282132
|
[6] |
Rohani S G, Taherinejad N, Radakovits D. A semiparallel full-adder in IMPLY logic[J]. IEEE Transactions on Very Large Scale Integration Systems, 2020, 28(1):297-301.
doi: 10.1109/TVLSI.2019.2936873
|
[7] |
Chen Q, Wang X P, Wan H B, et al. A logic circuit design for perfecting memristor-based material implication[J]. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2016, 36(2):279-284.
doi: 10.1109/TCAD.2016.2578881
|
[8] |
Kvatinsky S, Belousov D, Liman S, et al. MAGIC-memristor-aided logic[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2014, 61(11):895-899.
doi: 10.1109/TCSII.2014.2357292
|
[9] |
Kvatinsky S, Talati N, Gupta S, et al. Logic design within memristive memories using memristor-aided logic (MAGIC)[J]. IEEE Transactions on Nanotechnology, 2016, 15(4):635-650.
doi: 10.1109/TNANO.2016.2570248
|
[10] |
Gharpinde R, Thangkhiew P L, Datta K, et al. A scalable in-memory logic synjournal approach using memristor crossbar[J]. IEEE Transactions on Very Large Scale Integration Systems, 2018, 26(2):355-366.
doi: 10.1109/TVLSI.2017.2763171
|
[11] |
Wu T F, Li H T, Huang P C, et al. Hyperdimensional computing exploiting carbon nanotube FETs, resistive RAM, and their monolithic 3D integration[J]. IEEE Journal of Solid-State Circuits, 2018, 53(11):3183-3196.
doi: 10.1109/JSSC.2018.2870560
|
[12] |
Sun Y N, He W F, Mao Z G, et al. Monolithic 3D carbon nanotube memory for enhanced yield and integration density[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2020, 67(7):2431-2441.
doi: 10.1109/TCSI.2020.2980074
|
[13] |
Lin S, Kim Y, Lombardi F. CNTFET-based design of ternary logic gates and arithmetic circuits[J]. IEEE Transactions on Nanotechnology, 2011, 10(2):217-225.
doi: 10.1109/TNANO.2009.2036845
|
[14] |
Khezeli M R, Moaiyeri M H, Jalali A. Comparative analysis of simultaneous switching noise effects in MWCNT bundle and Cu power interconnects in CNTFET-based ternary circuits[J]. IEEE Transactions on Very Large Scale Integration Systems, 2019, 27(1):37-46.
doi: 10.1109/TVLSI.2018.2869761
|
[15] |
Miller D M, Thornton M A. Multiple valued logic: Concepts and representations[M]. San Rafael:Morgan & Claypool, 2008.
|
[16] |
Chen P Y, Yu S M. Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design[J]. IEEE Transactions on Electron Devices, 2015, 62(12):4022-4028.
doi: 10.1109/TED.2015.2492421
|
[17] |
Lee C S, Pop E, Franklin A D, et al. A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime-Part I: Intrinsic elements[J]. IEEE Transactions on Electron Devices, 2015, 62(9):3061-3069.
doi: 10.1109/TED.2015.2457453
|
[18] |
Lee C S, Pop E, Franklin A D, et al. A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime-Part II: Extrinsic elements, performance assessment, and design optimization[J]. IEEE Transactions on Electron Devices, 2015, 62(9):3070-3078.
doi: 10.1109/TED.2015.2457424
|