一种具有N埋层的AlGaN/GaN高电子迁移率晶体管

doi:10.16180/j.cnki.issn1007-7820.2021.05.011

Abstract

Abstract:

In order to further improve the breakdown voltage of GaN HEMT and keep low on-resistance, an AlGaN/GaN HEMT with an N-type GaN buried layer is proposed. The buried layer reduces the peak value of the electric field in the high field region by adjusting the electric field distribution of the device, thereby reducing the leakage current when the device is off-state.The horizontal electric field distribution in channel between the gate and drain is more uniform, which improves the breakdown voltage of device. The Sentaurus TCAD simulation demonstrates that the N-type GaN buried layer can significantly improve the breakdown voltage of the device. The breakdown voltage of the new structure reaches 892 V,which is 68% higher than the 530 V breakdown voltage of the traditional structure. The buried GaN layer has no effect on the on-state characteristics of the device, so that the device retains low on-resistance. These results indicate that the proposed structure has a good application prospect in the field of power devices.

Key words: GaN, HEMT, breakdown voltage, on-resistance, N-buried layer, electric field modulation, TCAD simulation, BFOM, 2DEG

CLC Number:

TN386.3

ZHANG Fei,LIN Mao,MAO Hongkai,SU Fangwen,SUI Jinchi. An AlGaN/GaN High-Electron Mobility Transistor with N-Buried Layer[J].Electronic Science and Technology, 2021, 34(5): 61-65.

Figures/Tables 10

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References 20

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参数	值
栅源间距L_GS	0.5 μm
栅漏间距L_GD	6.0 μm
栅极长度L_G	0.5 μm
栅场板长度L_GFP	0.5 μm
栅介质厚度T_Diel	20 nm
钝化层厚度T_Pass	100 nm
势垒层厚度T_Bar	25 nm
沟道层厚度T_Ch	50 nm
Middle缓冲层厚度T_Mid	0.4 μm
Bottom缓冲层厚度T_Bot	1.6 μm
N埋层浓度N_d	1×17 cm^-3
N埋层长度L_N	2.2 μm
N埋层厚度T_N	0.1 μm
N埋层与沟道层的间距D	1.9 μm

An AlGaN/GaN High-Electron Mobility Transistor with N-Buried Layer

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