Electronic Science and Technology ›› 2024, Vol. 37 ›› Issue (2): 69-75.doi: 10.16180/j.cnki.issn1007-7820.2024.02.010

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Research on MHz High Voltage Pulse Power Supply

DING Kai1,RAO Junfeng2   

  1. 1. School of Mechanical Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China
    2. Suzhou Institute of Medical Engineering and Technology,Chinese Academy of Sciences,Suzhou 215163,China
  • Received:2022-11-05 Online:2024-02-15 Published:2024-01-18
  • Supported by:
    Shanghai Youth Science and Technology Talents Sailing Plan(20YF1431100)(20YF1431100)


In view of the application requirements of high frequency nanosecond pulse such as uniform discharge and biomedical, a high frequency and high voltage pulse power supply based on radio frequency Metal Oxide-Semiconductor Field Effect Transistor(MOSFET) is designed. The control signal of the pulse power supply is provided by Field Programmable Gate Array(FPGA) and transmitted through optical fiber. After amplification by the driver chip, each stage of the discharge tube is triggered synchronously. The drive chip adopts power module to provide different ground potential. The discharge tube adopts Residual Current Device(RCD) absorbing circuit to improve the instantaneous working condition at the opening and closing time. The main analysis and research is the effect of the last stage isolation inductance on the voltage waveform of discharge tube and load voltage waveform, and the Marx circuit is improved. The experimental results show that the power supply can output nanosecond pulses with rising edge of 40 ns, half-height width of 100 ns and voltage amplitude of 1.1 kV at 1 MHz repetition rate on 1 kΩ resistance load. It is verified that the power supply can work reliably in high frequency and high voltage state and meet the design requirements.

Key words: Marx generator, RF MOSFET, pulse power supply, nanosecond pulse, inductance of isolation, FPGA, pulse power technology, 1 MHz repetition frequency

CLC Number: 

  • TN782